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PD - 93836B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level IRHNJ57230SE 100K Rads (Si) RDS(on) 0.22 ID 12A
IRHNJ57230SE JANSR2N7486U3 200V, N-CHANNEL REF: MIL-PRF-19500/704
4#
c
TECHNOLOGY
QPL Part Number JANSR2N7486U3
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-0.5
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 12 7.8 48 75 0.6 20 60 12 7.5 5.4 -55 to 150 300 (for 5s) 1.0 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
09/10/03
IRHNJ57230SE, JANSR2N7486U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 -- -- 2.5 6.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.26 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.22 4.5 -- 10 25 100 -100 28 9.0 12 25 100 35 30 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 7.8A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.8A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 100V VDD = 100V, ID = 12A, VGS =12V,RG = 7.5
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1000 184 11
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12 48 1.2 300 3.2
Test Conditions
A
V nS C
Tj = 25C, IS = 12A, VGS = 0V Tj = 25C, IF = 12A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max
-- -- -- 6.9 1.67 --
Units
C/W
Test Conditions
soldered to a 2" square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ57230SE, JANSR2N7486U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-0.5) Diode Forward Voltage
100K Rads (Si)
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=160V, VGS=0V VGS = 12V, ID = 7.8A VGS = 12V, ID = 7.8A VGS = 0V, ID = 12A
Min
200 2.0 -- -- -- -- -- --
Max
-- 4.5 100 -100 10 0.222 0.22 1.2
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 Range (m) @VGS=0V @VGS=-5V 39.5 200 200 32.5 200 200 28.4 200 200 VDS (V) @VGS=-10V @VGS=-15V 200 200 200 185 150 50 @VGS=-20V 200 120 25
250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNJ57230SE, JANSR2N7486U3
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1
5.0V
1
0.1
5.0V
20s PULSE WIDTH T = 25 C
J 1 10 100
0.01 0.1
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12A
I D , Drain-to-Source Current (A)
TJ = 150 C
10
2.0
1.5
TJ = 25 C
1
1.0
0.5
0.1 5.0
15
V DS = 50V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHNJ57230SE, JANSR2N7486U3
2000
1600
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 12A
C, Capacitance (pF)
15
VDS = 160V VDS = 100V VDS = 40V
Ciss
1200
C oss
10
800
400
C rss
5
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
10
ID, Drain-to-Source Current (A)
10
100s 1ms
Tc = 25C Tj = 150C Single Pulse 1.0 10 100
TJ = 25 C
1
1
10ms
1000
0.1 0.3
V GS = 0 V
0.6 0.9 1.2 1.5
0.1
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNJ57230SE, JANSR2N7486U3
Pre-Irradiation
12
VDS VGS
RD
D.U.T.
+
I D , Drain Current (A)
9
RG
-VDD
VGS
6
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
3
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ57230SE, JANSR2N7486U3
100
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
80
TOP BOTTOM ID 5.4A 9.6A 12A
VDS
L
D R IV E R
60
RG
2VGS 0V tp
D .U .T.
IA S
+ - VD D
A
40
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
20
0 25 50 75 100 125 150
V (B R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNJ57230SE, JANSR2N7486U3
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 0.82 mH Peak IL = 12A, VGS = 12V I SD 12A, di/dt 366A/s, VDD 200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/03
8
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